Semiconductors: Bonding forces in solids, energy bands, metals, semiconductors and insulators, direct and indirect semiconductors, electrons and holes, intrinsic and extrinsic materials, conductivity and mobility, drift and resistance, effects of temperature and doping on mobility, Hall effect.

P-N JUNCTIONS: Forward and reverse bias junctions, Qualitative description of current flow at a junction, reverse bias and reverse bias breakdown, Zener breakdown, avalanche breakdown, Thermal runaway.

Optoelectronic Devices: Photo diodes, current and voltage in illuminated junction, solar cells, photo detectors, light emitting diode, light emitting materials

Bipolar Junction Transistor: Fundamentals of BJT operation, amplification with BJTs, BJT fabrication, the Coupled diode model (Ebers -Moll Model), switching operation of transistor, cutoff, saturation, switching cycle, specifications, drift in the base region, base narrowing, avalanche breakdown.

Field Effect Transistors: Basic PN JFET operation, equivalent circuit and frequency limitation, MOSFET two terminal MOS structure, energy band diagram, ideal capacitance voltage characteristics and frequency effects, basic MOSFET operation, MOSFET structure, current-voltage characteristics.

Fabrication of PN junction: Thermal oxidation, diffusion, rapid thermal processing, Ion implantation, chemical vapour deposition, photolithography, etching, metallization.

Integrated Circuits: Background, evolution of ICs, CMOS process integration, integration of other circuit elements.