VLSI Design and Testing BEC602
Course Code: BEC602
Credits: 04
CIE Marks: 50
SEE Marks: 50
Total Marks: 100
Exam Hours: 03
Total Hours of Pedagogy: 50H
Teaching Hours/Weeks: [L:T:P:S] 4:0:0:0
Introduction to CMOS Circuits: Introduction, MOS Transistors, MOS Transistor switches, CMOS Logic, Alternate Circuit representation, CMOS-nMOS comparison.
MOS Transistor Theory: n-MOS enhancement transistor, p-MOS transistor, Threshold Voltage, Threshold voltage adjustment, Body effect, MOS device design equations, V-I characteristics, CMOS inverter DC characteristics, Influence of βn / βp ratio on transfer characteristics, Noise margin, Alternate CMOS inverters. Transmission gate DC characteristics. Latch-up in CMOS.
CMOS Process Technology: Silicon Semiconductor Technology, CMOS Technologies, Layout
Design Rules.
Circuit Characterization and Performance Estimation: Introduction, Resistance Estimation,
Capacitance Estimation, Switching Characteristics, CMOS gate transistor sizing, Determination of
conductor size, Power consumption, Charge sharing, Scaling of MOS transistor sizing, Yield.
CMOS Circuit and Logic Design: Introduction, CMOS Logic structures, CMOS Complementary logic, Pseudo n-MOS logic, Dynamic CMOS logic, Clocked CMOS Logic, Cascade Voltage Switch logic, Pass transistor Logic, Electrical and Physical design of Logic gates, The inverter, NAND and NOR gates, Body effect, Physical Layout of Logic gates, Input output Pads.
Sequential MOS Logic Circuits: Introduction, Behaviour of Bistable Elements (Excluding
Mathematical analysis) SR Latch Circuit, Clocked Latch and Flip-Flop Circuits, Clocked SR Latch,
Clocked JK Latch.
Structured Design and Testing: Introduction, Design Styles, Testing